Semiconductor structure
AssigneeNanya Technology Corporation
InventorWei-Chih WANG
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Abstract
A semiconductor structure includes a substrate and a gate structure. The substrate includes a source region and a drain region. The source region is located in a first area of the substrate. The drain region is located in a second area of the substrate. The gate structure includes a first gate region and a second gate region. The first gate region is disposed above the first area of the substrate or disposed above the second area of the substrate. The second gate region is disposed above a third area of the substrate. A second height of the second gate region is higher than a first height of the first gate region.
Claims10
A semiconductor structure, comprising:
- a substrate, comprising:
- a source region, located in a first area of the substrate;
- and
- a drain region, located in a second area of the substrate;
- and
- a gate structure, comprising:
- a first gate region, disposed above the first area of the substrate or disposed above the second area of the substrate,
- a second gate region, disposed above a third area of the substrate, wherein a second height of the second gate region is higher than a first height of the first gate region.
Dependencies are inferred from the claim text.