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AssigneeNanya Technology Corporation
InventorChih-Wei HUANG
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The present application discloses a semiconductor device with capacitors having a shared electrode and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first capacitor unit, a second capacitor unit, and a connection structure. The first capacitor unit includes a bottom conductive structure inwardly positioned in the substrate, and a shared conductive layer positioned above the bottom conductive structure with a first insulating layer interposed therebetween. The second capacitor unit includes the shared conductive layer, a top conductive layer positioned above the shared conductive layer with a second insulating layer interposed therebetween. The connection structure electrically connects the bottom conductive structure and the top conductive layer such that the first capacitor unit and the second capacitor unit are in parallel.
A semiconductor device, comprising:
The semiconductor device of claim 4, wherein the connection structure comprising a first conductive via electrically connecting the top conductive layer, a second conductive via electrically connecting the bottom conductive structure, and a conductive line horizontally positioned on the first conductive via and the second conductive via and electrically connect the first conductive via and the second conductive via.
A method for fabricating a semiconductor device, comprising:
Dependencies are inferred from the claim text.