US 2022/0190005 A1Published application

Image sensor including shared pixels

AssigneeSamsung Electronics Co., Ltd.

InventorEunsub SHIM

Life of this patent

Estimating the term…

Loading patent…

Abstract

An image sensor may include a first shared pixel region and a first isolation layer on a substrate, the first isolation layer defining the first shared pixel region. The first shared pixel region may include photo-sensing devices in sub-pixel regions and a first floating diffusion region connected to the photo-sensing devices. The sub-pixel regions may include a first sub-pixel region and a second sub-pixel region that constitute a first pixel group region. The sub-pixel regions may include a third sub-pixel region and a fourth sub-pixel region that constitute a second pixel group region. The first shared pixel region may include first and second well regions doped with first conductivity type impurities. The second well region may be spaced apart from the first well region. The first pixel group region may share a first well region. The second pixel group region may share the second well region.

Claims20

Dependent claims

An image sensor comprising:

a substrate having a first surface and a second surface;
and
a plurality of shared pixel regions formed in the substrate, the plurality of shared pixel regions arranged in a first direction and a second direction perpendicular to the first direction;
wherein each of the plurality of shared pixel regions includes a first pixel group region and a second pixel group region arranged in the second direction,
wherein each of the first pixel group region and the second pixel group region includes a first sub-pixel region and a second sub-pixel region arranged in the first direction,
wherein each of the first sub-pixel region and the second sub-pixel region includes a photo sensing region on the first surface of the substrate,
wherein each of the first pixel group region and the second pixel group region includes a first well region doped with first conductivity type impurities and formed on the photo sensing region in a third direction perpendicular to the first direction and the second direction, and
wherein different first well regions in each of the plurality of shared pixels regions are separated from each other.

5 more elements

An image sensor comprising:

a substrate having a first surface and a second surface;
and
a first shared pixel region and a second shared pixel region each formed in the substrate,
wherein the first shared pixel region includes a first pixel group region and a second pixel group region arranged in a first direction,
wherein the second shared pixel region includes a third pixel group region and a fourth pixel group region arranged in a second direction perpendicular to the first direction,
wherein each of the first pixel group region and the second pixel group region includes a first sub-pixel region and a second sub-pixel region arranged in the second direction,
wherein each of the third pixel group region and the fourth pixel group region includes a third sub-pixel region and a fourth sub-pixel region arranged in the first direction,
wherein the first shared pixel region includes first well regions doped with first conductivity type impurities and formed longer in the second direction than the first direction,
wherein the second shared pixel region includes second well regions doped with first conductivity type impurities and formed longer in the first direction than the second direction.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/687,805Filed 7 Mar 2022
Priority: KR 10-2019-004218410 Apr 2019
Published: 16 Jun 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10F 39/803
Constructional details of image sensors: pixels having integrated switching, control, storage or amplification elements
H10F 39/8033
Pixels having integrated switching, control, storage or amplification elements: photosensitive area
H10F 39/18
Image sensors: complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
H10F 39/8053
Coatings: colour filters

Family

Application16/804,674Continuation · filed 28 Feb 2020
Application17/687,805Continuation
US 11,282,875 B2Related patent
US 12,328,961 B2Related patent
US 2020/0328238 A1Published application
US 2022/0190005 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key