Vertical channel with conductive structures to improve string current

A system comprising:

• a controller;
• and
• a storage device coupled to the controller, the storage device including
• a three-dimensional (3D) NAND structure with a vertical channel to conduct current to a first storage node of a first memory cell and to a second storage node of a second memory cell, the vertical channel having a polysilicon material to conduct current, and the vertical channel having a drain region between the first storage node and the second storage node;
• a recess in the drain region to extend away from a center of the vertical channel and toward respective control gates of the first storage node and the second storage node;
• and
• a structure in the recess to reduce resistance in the drain region along the vertical channel between the first storage node and the second storage node.

A method of forming a vertical channel, comprising:

• forming a vertical opening through vertically stacked layers of a three-dimensional (3D) NAND structure;
• forming a first storage node of a first memory cell and a second storage node of a second memory cell;
• forming a recess in a drain region between the first storage node and the second storage node;
• forming a conductive structure in the recess in the drain region to extend away from a center of the vertical opening and toward respective control gates of the first storage node and the second storage node;
• and
• forming a vertical channel to conduct current past the first storage node and the second storage node, the vertical channel electrically connected to the conductive structure in the recess to reduce resistance in the drain region along the vertical channel between the first storage node and the second storage node.