Processed wafer and processing method thereof
AssigneeFujian Jing'an Optoelectronics Co., Ltd.
InventorsShengyu Yang, Minghui Fang, Lin Lu, Shihwei Huang, Shaobin Chen
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Abstract
A processed wafer includes an outer surface, and a treated portion having a depth of 0 to 50 μm measured from the outer surface. At least a part of the treated portion has an oxygen concentration of less than 13 wt %. A method for processing a wafer includes the steps of: applying a reducing medium on the wafer, the reducing medium is in powder form and including a reducing agent, and at least one of a catalyst and a releasing agent; subjecting the wafer to a reduction reaction at a temperature below Curie temperature of the and under a non-oxidizing atmosphere so as to obtain the aforesaid processed wafer.
Claims26
A processed wafer, comprising:
- an outer surface;
- and
- a treated portion having a depth of 0 to 50 μm measured from the outer surface,
- wherein at least a part of said treated portion has an oxygen concentration of less than 13 wt %.
A method for processing a wafer, comprising the steps of:
- (a) applying a reducing medium on at least one wafer, the reducing medium being in powder form and including a reducing agent, and at least one of a catalyst and a releasing agent, the catalyst generating a reducing gas upon heating;
- and
- (b) subjecting the wafer applied with the reducing medium to a reduction reaction at a temperature below Curie temperature of a material of the wafer and under a non-oxidizing atmosphere so as to obtain a processed wafer.
Dependencies are inferred from the claim text.