Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films

A process to deposit a silicon oxide film onto a substrate comprises:

• a) providing a substrate in a reactor;
• b) introducing into the reactor at least one organoaminodisilazane precursor having the following Formula IA:
• wherein R1 and R2 are independently selected from a C1 to C6 alkyl group;
• R3 is selected from hydrogen, a linear or branched C1 to C6 alkyl group, and a C6 to C10 aryl group;
• and either R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
• c) purging the reactor with purge gas to purge away unconsumed reactants and/or reaction byproducts;
• d) introducing an oxygen source into the reactor to react with the precursor and form the silicon oxide film;
• and
• e) purging the reactor with purge gas to purge away unconsumed reactants and/or reaction byproducts;
• wherein steps b through e are repeated until a desired thickness of the silicon oxide film is deposited, wherein the process in conducted at one or more temperatures ranging from 500 to 800° C. and one or more pressures ranging from 50 miliTorr (mT) to 760 Torr.