Back to results
US 2022/0118551 A1Published application
Method for producing three-dimensional silicon carbide-containing objects
AssigneePSC Technologies, Inc.
InventorSiegmund GREULICH-WEBER
Life of this patent
Estimating the term…
Abstract
Subject-matter of the invention is a method of applying silicon carbide-containing materials to a substrate surface, and an apparatus for carrying out the method.
Claims18
A method of applying silicon carbide-containing materials to a substrate surface, wherein
- a gaseous, liquid or powdery precursor material containing a silicon source and a carbon source is gasified and/or decomposed by the action of energy and at least a part of the decomposition products are deposited site-selectively on the substrate surface as a silicon carbide-containing material.
An apparatus for the site-selective deposition of silicon carbide-containing materials on a substrate surface,
- wherein:
- the apparatus comprises
- (c) at least one device for decomposing gaseous precursor materials or for gasifying and decomposing liquid or powdery precursor materials, wherein the precursor materials comprise at least one carbon source and at least one silicon source, and
- (d) at least one device for generating at least one particle beam and/or for directing a particle beam onto the substrate surface.
1 more element
Dependencies are inferred from the claim text.