Organic light emitting transistor devices with shared substrates
AssigneeHewlett-Packard Development Company, L.P.
InventorsHsing-Hung Hsieh, Alan Man Pan Tam, Super Liao
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Abstract
In example implementations, an organic light emitting transistor is provided. The organic light emitting transistor includes a substrate, at least one layer deposited onto the substrate, a thin film transistor, and an organic light emitting transistor. The thin film transistor is formed on the substrate to include a first portion of the at least one layer and the organic light emitting transistor is formed on the substrate to include a second portion of the at least one layer.
Claims15
An organic light emitting transistor device, comprising:
- a substrate;
- at least one layer deposited onto the substrate;
- a thin film transistor formed on the substrate to include a first portion of the at least one layer;
- and
- an organic light emitting transistor formed on the substrate to include a second portion of the at least one layer.
An organic light emitting transistor device, comprising:
- a substrate;
- a first gate and a second gate formed on the substrate from a single gate layer;
- a first dielectric formed over the first gate and a second dielectric formed over the second gate from a single dielectric layer;
- a first p-layer or a first n-layer formed on top of the first dielectric and a second p-layer formed on top of the second dielectric;
- an emissive layer formed on top of the second p-layer;
- a second n-layer formed on top of the emissive layer;
- and
- a first source and a first drain formed on the first p-layer or the first p-layer and a second source and a second drain formed on the second n-layer.
A method, comprising:
- applying a gate layer on a substrate;
- etching a first gate and a second gate from the gate layer;
- applying a dielectric layer over the first gate and the second gate;
- etching a first dielectric layer over the first gate and a second dielectric layer over the second gate from the dielectric layer;
- forming a thin film transistor on the first dielectric layer and the first gate;
- and
- forming an organic light emitting transistor on the second dielectric layer and the second gate.
Dependencies are inferred from the claim text.