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US 2022/0102629 A1Published application
Semiconductor structure and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorChih-Wei Kuo
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Abstract
The invention provides a semiconductor structure, the semiconductor structure includes a resistance random access memory (RRAM), a first spacer located at two sides of the RRAM, a second spacer located outside the first spacer, wherein the second spacer contains metal material or metal oxide material, and a third spacer located outside the second spacer.
Claims20
A semiconductor structure, comprising:
- a resistance random access memory (RRAM);
- a first spacer located at two sides of the RRAM;
- a second spacer located outside the first spacer, wherein the second spacer comprises metal material or metal oxide material;
- and
- a third spacer located outside the second spacer.
2 more elements
A manufacturing method of a semiconductor structure, comprising:
- providing a resistive random access memory (RRAM);
- forming a first spacer on both sides of the resistance random access memory;
- forming a second spacer outside the first spacer, wherein the second spacer comprises metal material or metal oxide material;
- and
- forming a third spacer outside the second spacer.
2 more elements
Dependencies are inferred from the claim text.