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US 2022/0102626 A1Published application
Phase-change memory (pcm) including liner reducing resistance drift
AssigneeInternational Business Machines Corporation
InventorsNing Li, Joel P. de Souza, Kevin W. Brew, Devendra K. Sadana
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Abstract
A Phase-Change Memory (PCM) device includes a dielectric layer, a bottom electrode disposed in the dielectric layer, a liner material disposed on the bottom electrode, a phase-change material disposed on the liner material, and a top electrode disposed on the phase-change material and in the dielectric layer.
Claims20
A Phase-Change Memory (PCM) device comprising:
- a dielectric layer;
- a bottom electrode disposed in the dielectric layer;
- a liner material disposed on the bottom electrode;
- a phase-change material disposed on the liner material;
- and
- a top electrode disposed on the phase-change material and in the dielectric layer.
3 more elements
A method of manufacturing a Phase-Change Memory (PCM) device comprising:
- providing a substrate;
- forming a first structure comprising a first dielectric layer and a bottom electrode, wherein the bottom electrode is disposed in the first dielectric layer and the bottom electrode and the first dielectric layers are disposed on the substrate;
- forming a liner material disposed on the bottom electrode and in a second dielectric layer;
- forming a phase-change material on the liner material and in a third dielectric layer;
- and
- forming a top electrode disposed on the phase-change material and in a fourth dielectric layer.
3 more elements
A Phase-Change Memory (PCM) device comprising:
- a dielectric layer;
- a first electrode disposed on a first side of the dielectric layer;
- a second electrode disposed on a second side of the dielectric layer, opposite the first electrode;
- a phase-change material disposed on the dielectric layer and the first and second electrodes;
- and
- a liner material disposed on the phase-change material.
3 more elements
Dependencies are inferred from the claim text.