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US 2022/0102625 A1Published application
Metal oxide liner for cross-point phase change memory cell
AssigneeIntel Corporation
InventorsHari Chandrasekaran, Rajesh Venkatasubramanian, Hoi-Sung Chung
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Abstract
Phase change memory material stacks having a metal oxide liner for memory integrated circuits, related systems, and methods of fabrication are disclosed. Such phase change memory material stacks include a phase change material and a switching device and the sidewalls of the phase change memory material stacks are lined with a metal oxide to protect the material stacks during manufacture and use and to provide isolation between the material stacks.
Claims20
A phase change memory structure comprising
- a memory cell material stack coupled to and between first and second electrodes, the memory cell material stack comprising at least a phase change material layer and a switching device;
- and
- a liner on one or more sidewalls of the memory cell material stack, the liner comprising lanthanum and oxygen or hafnium, silicon, and oxygen.
A system comprising
- a power supply;
- an integrated memory circuit coupled to the power supply, the integrated memory circuit comprising a first access line, a second access line, and a memory cell coupled to the first and second access lines, the memory cell comprising a phase change material layer and a switching device separated by an electrode layer;
- and
- a liner on a sidewall of each of the phase change material layer, the electrode layer, and the switching device, the liner comprising lanthanum and oxygen or hafnium, silicon, and oxygen.
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A method of forming an integrated circuit structure comprising:
- forming a plurality of memory cell material layers over a substrate, the memory cell material layers comprising at least a phase change material layer and a switching layer;
- patterning the memory cell material layers to form a memory cell material stack pillar;
- and
- depositing, via thermal atomic layer deposition, a liner on one or more sidewalls of the memory cell material stack pillar, the liner comprising lanthanum and oxygen or hafnium, silicon, and oxygen.
1 more element
Dependencies are inferred from the claim text.