US 2022/0102546 A1 · NON-VOLATILE MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Abstract

A non-volatile memory structure includes a substrate, a tunnel dielectric layer on the substrate, and several separate gate structures on the substrate. The gate structures are disposed within an array region of the substrate. Each gate structure includes a floating gate and a control gate on the floating gate. A first dielectric layer is formed above the substrate and covers the top surface of the tunnel dielectric layer. The first dielectric layer also covers the side surfaces and the top surface of each gate structure. Gaps between portions of the first dielectric layer on the side surfaces of two adjacent gate structures are fully filled with the air to form air gaps. Several insulating blocks are formed on the first dielectric layer, and they correspond to the gate structures. A second dielectric layer is formed on the insulating blocks and covers the insulating blocks and the air gaps.

Claims15

Dependent claims

A non-volatile memory structure, comprising:

a substrate having an array region;
a tunnel dielectric layer on the substrate;
gate structures over the array region of the substrate, wherein the gate structures are separate from each other, and each of the gate structures includes a floating gate and a control gate above the floating gate;
a first dielectric layer formed above the substrate and covering a top surface of the tunnel dielectric layer, wherein the first dielectric layer covers side surfaces and top surfaces of the gate structures, and spaces between portions of the first dielectric layer on the side surfaces of two adjacent gate structures are fully filled with the air to form respective air gaps;
insulating blocks above the first dielectric layer, wherein each of the insulating blocks corresponds to one of the gate structures;
and
a second dielectric layer on the insulating blocks, wherein the second dielectric layer covers the insulating blocks and the air gaps.

4 more elements

A method of manufacturing a non-volatile memory structure, comprising:

providing a substrate having a first region and a second region;
forming a tunnel dielectric layer on the substrate;
forming first stacked structures and second stacked structures separately above the tunnel dielectric layer, wherein the first stacked structures and the second stacked structures are respectively formed in the first region and the second region;
forming a first dielectric layer above the substrate, wherein the first dielectric layer covers a top surface of the tunnel dielectric layer, the first dielectric layer covers side surfaces and top surfaces of each of the first stacked structures and each of the second stacked structures;
forming a plurality of insulating blocks above the first dielectric layer, wherein the insulating blocks are formed over the top surface of each of the first stacked structures and each of the second stacked structures;
and
forming a second dielectric layer over the first stacked structures and the second stacked structures to form air gaps, wherein the second dielectric layer covers the insulating blocks and the air gaps, and spaces between portions of the first dielectric layer on the side surfaces of two adjacent first stacked structures are fully filled with the air to form the air gaps.

4 more elements

Dependencies are inferred from the claim text.

Non-volatile memory structure and method of manufacturing the same

Life of this patent

Non-volatile memory structure and method of manufacturing the same

Life of this patent

Abstract

Claims15