Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes

A system comprising:

• a power supply;
• an integrated circuit die over a package substrate and coupled to the power supply;
• and
• a thin film capacitor in the package substrate, the thin film capacitor comprising a dielectric layer comprising titanium and oxygen between first and second electrodes, wherein at least one of the first electrode or the second electrode comprises a noble metal and oxygen.

A method of forming a thin film capacitor comprising:

• forming a first conductive layer over a substrate;
• disposing a first electrode layer over the first conductive layer;
• disposing a dielectric layer comprising titanium and oxygen on the first electrode layer;
• disposing an electrode layer on the dielectric layer, at least one of the first or second electrode layers comprising a noble metal and oxygen;
• disposing a conductive layer over the second electrode layer;
• and
• patterning the first electrode layer, the dielectric layer, the second electrode layer, and the conductive layer to form a thin film capacitor comprising a first electrode over the first conductive layer, a dielectric layer over the first electrode, a second electrode over the dielectric layer, and a second conductive layer over the second electrode.