Semiconductor device

A semiconductor device, comprising:

• an active pattern protruding from a substrate and including a plurality of stacked semiconductor patterns;
• a gate pattern disposed on the active pattern and intersecting the active pattern;
• a gate spacer at a side of the gate pattern and on the active pattern;
• and
• a capping pattern between the active pattern and the gate spacer,
• wherein the capping pattern has a crystalline structure, and
• wherein the capping pattern is in physical contact with sidewalls of the plurality of stacked semiconductor patterns.

A semiconductor device, comprising:

• an active pattern protruding from a substrate and including a plurality of stacked semiconductor patterns;
• a device isolation pattern provided on a lower portion of the active pattern and exposing an upper portion of the active pattern;
• a gate pattern disposed on the active pattern and intersecting the active pattern;
• a gate insulating pattern between the gate pattern and the upper portion of the active pattern;
• a gate spacer at a side of the gate pattern and on the active pattern;
• a capping pattern between the active pattern and the gate spacer;
• a source/drain pattern at the side of the gate pattern, the gate spacer disposed between the source/drain pattern and the gate pattern;
• and
• an interlayer insulating layer on an upper surface of the source/drain pattern and on an outer-sidewall of the gate spacer,
• wherein the capping pattern is in physical contact with the active pattern,
• wherein the capping pattern has a crystalline structure.