Method for manufacturing memory and memory

A method for manufacturing a memory device, comprising:

• providing a substrate, the substrate comprising active regions;
• forming Bit Lines (BLs) over the substrate, the BLs covering part of the active regions;
• forming a supporting layer over the substrate covering the BLs and the substrate, first middle holes penetrating through the supporting layer and extending into the active regions being formed in the supporting layer, and gaps being formed between the first middle holes and the BLs;
• forming first protective layers in the first middle holes, and forming etching holes communicating with the substrate in the first protective layers, such that portions of the active regions are exposed in the etching holes;
• etching the substrate and the active regions exposed in the etching holes along the etching holes to form contact grooves;
• and
• forming guide wires configured to electrically connect to the active regions in the first middle holes, the etching holes and the contact grooves.