Semiconductor device, semiconductor structure and manufacturing method therefor

A semiconductor structure, comprising:

• a substrate;
• a first insulating layer covering the substrate, and comprising a plurality of vias and a plurality of isolation structures that are alternatingly distributed;
• a plurality of conductive contact plugs respectively covering bottoms of the vias, wherein the conductive contact plugs each comprises a first region and a second region adjacent to each other, and the conductive contact plugs located in the first regions cover outer walls of the isolation structures and extend along the outer walls to surfaces of the isolation structures distal from the substrate;
• and
• a passivation layer covering side walls and surfaces of the conductive contact plugs.

A semiconductor device, comprising:

• a substrate;
• a first insulating layer covering the substrate, and comprising a plurality of vias and a plurality of isolation structures that are alternatingly distributed;
• a plurality of conductive contact plugs respectively covering bottoms of the vias, wherein the conductive contact plugs each comprises a first region and a second region adjacent to each other, and the conductive contact plugs located in the first regions cover outer walls of the isolation structures and extend along the outer walls to surfaces of the isolation structures distal from the substrate;
• and
• a passivation layer covering side walls and surfaces of the conductive contact plugs;
• a capacitor array comprising a plurality of columnar capacitors arranged at intervals, wherein the plurality of columnar capacitors are respectively formed on the conductive contact plugs, and lower electrode layers of the columnar capacitors are in contact with the conductive contact plugs.