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US 2022/0093508 A1Published application
Via structures of passive semiconductor devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXUESONG RAO, BENFU LIN, BO LI, CHENGANG FENG, YUDI SETIAWAN, YUN LING TAN
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Abstract
A semiconductor device is provided, which includes a dielectric layer and a via structure. The dielectric layer is arranged over a substrate. The via structure is arranged in the dielectric layer, the via structure having a peripheral portion and a central portion. The peripheral portion of the via structure has a height that is greater than that of the central portion.
Claims20
A semiconductor device comprising:
- a dielectric layer over a substrate;
- and
- a via structure in the dielectric layer, wherein the via structure has a peripheral portion and a central portion, the peripheral portion having a height that is greater than that of the central portion.
A method of forming a semiconductor device comprising:
- providing a substrate;
- forming a dielectric layer having a first region and a second region over the substrate;
- and
- forming a via structure in the first region of the dielectric layer, wherein the via structure has a peripheral portion and a central portion, the peripheral portion having a height greater than that of the central portion.
1 more element
Dependencies are inferred from the claim text.