Interconnect structures including self aligned vias
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Terry A. Spooner, Koichi Motoyama, Shyng-Tsong Chen
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AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Terry A. Spooner, Koichi Motoyama, Shyng-Tsong Chen
Estimating the term…
Back end of line metallization structures and methods for fabricating self-aligned vias. The structures generally include a first interconnect structure disposed above a substrate. The first interconnect structure includes a metal line formed in a first interlayer dielectric. A second interconnect structure overlies the first interconnect structure. The second interconnect structure includes a second cap layer on the first interlayer dielectric, a second interlayer dielectric thereon, and at least one self-aligned via in the second interlayer dielectric conductively coupled to at least a portion of the metal line of the first interconnect structure, wherein any misalignment of the at least one self-aligned via results in the at least one self-aligned via landing on both the metal line of the first interconnect structure and the second cap layer. The second cap layer is an insulating material.
A semiconductor device for an integrated circuit, the semiconductor device comprising:
An interconnect structure for an integrated circuit, the interconnect structure comprising:
Dependencies are inferred from the claim text.