Method and apparatus for processing a substrate
AssigneeTokyo Electron Limited
InventorsYuki IIJIMA, Toru HISAMATSU, Kae KUMAGAI
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Abstract
A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
Claims17
A plasma processing apparatus comprising:
- a chamber having a gas inlet and a gas outlet;
- a substrate support disposed in the chamber;
- a plasma generator configured to generate a plasma in the chamber;
- and
- a controller configured to cause:
- (a) placing a substrate on the substrate support, the substrate having a first film and a second film on the first film, the second film having an opening;
- and
- (b) generating a first plasma in the chamber to etch the first film through the opening in the second film and form a protective film from the second film on a sidewall of an etched feature in the first film, and
- (c) generating a second plasma in the chamber to remove an excessive deposition that clogs the etched feature in the first film and/or the opening in the second film.
A plasma processing apparatus comprising:
- a chamber having a gas inlet and a gas outlet;
- a substrate support disposed in the chamber;
- a plasma generator configured to generate a plasma in the chamber;
- and
- a controller configured to cause:
- (a) placing a substrate on the substrate support, the substrate having a first film and a second film on the first film, the second film having an opening;
- and
- (b) generating a first plasma in the chamber to etch the first film through the opening in the second film and form a protective film from the second film on a sidewall of an etched feature in the first film,
- (c) performing one or more cycles each including at least one operation selected from the group consisting of:
- (c1) generating a second plasma in the chamber to etch the first film through the opening in the second film;
- (c2) generating a third plasma in the chamber to form a silicon-containing film at a top of the second film;
- and
- (c3) generating a fourth plasma in the chamber to remove an excessive deposition that clogs the etched feature in the first film and/or the opening in the second film.
Dependencies are inferred from the claim text.