Semiconductor storage device

A semiconductor storage device comprising a first wiring layer and a second wiring layer, wherein

• the first wiring layer includes a signal line through which a data signal is transferred and a plurality of dummy patterns formed of a material same as a material of the signal line,
• the second wiring layer includes a first voltage supply line through which first voltage is supplied and a second voltage supply line through which second voltage different from the first voltage is supplied,
• each of the dummy patterns is electrically connected with any one of the first voltage supply line and the second voltage supply line, and
• in an adjacent dummy pattern that is one of the dummy patterns and disposed adjacent to the signal line, a surface facing the signal line is constituted by a first surface positioned at a first distance to the signal line and a second surface positioned at a second distance to the signal line, the second distance being different from the first distance.