Memory subword driver circuits and layout
AssigneeMicron Technology, Inc.
InventorKyuseok Lee
Life of this patent
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Abstract
In some examples, a subword driver block of a memory device includes a first active region and a second active region adjacent to each other. The first active region forms drains/sources of a first and second transistors in a first region; the second active region forms drains/sources of a third and fourth transistors in a second region, where the first and second regions are adjacent to each other. The first, second, third and fourth transistors are coupled to a common non-active potential via a shared contact overlaid over a merged region between the first and second regions. The first and second active regions may comprise N+ diffusion materials.
Claims24
A semiconductor device comprising:
- a first area of a subword driver block, the first area comprising:
- a first active region on which a first transistor and a second transistor are formed;
- a second active region on which a third transistor and a fourth transistor are formed;
- a diffusion region configured to merge the first and second active regions;
- and
- a contact coupled to the first active region and a non-active potential,
- wherein third and fourth transistors are coupled to the non-active potential via the contact and the diffusion region.
An apparatus comprising:
- a subword driver block comprising:
- at least first and second active regions extending in a first direction;
- and
- one or more common diffusion regions spaced in the first direction and configured to merge the first and second active regions;
- a gate electrode layer comprising:
- first gate electrode extending in a second direction substantially perpendicularly to the first direction, the first gate electrode overlaid across the first and second active regions in a plan view to form first and second transistors;
- and
- second gate electrode extending in the second direction, the second gate electrode overlaid across the first and second active regions in the plan view to form third and fourth transistors;
- and
- a diffusion contact overlaid on the first active region, the diffusion contact is shared by the second and fourth transistors via a respective common diffusion region of the one or more common diffusion regions.
An apparatus comprising:
- a first active region and a second active region of a subword driver block, the first and second active regions are adjacent to each other and extend in a first direction, wherein:
- the first active region forms drains/sources of first and second transistors;
- the second active region forms drains/sources of third and fourth transistors;
- and
- the first, second, third and fourth transistors are coupled to a common contact.
Dependencies are inferred from the claim text.