Pattern forming method, template manufacturing method, and photomask manufacturing method

A template manufacturing method comprising:

• forming a first film on a substrate;
• forming a first opening pattern and a second opening pattern in the first film, the second opening pattern being provided in a position where the second opening pattern does not overlap the first opening pattern in plan view;
• forming a second film on the substrate on which the first film is formed, after forming the first opening pattern and the second opening pattern;
• forming a third opening pattern and a fourth opening pattern in the second film, the third opening pattern being provided in a position where the third opening pattern partly overlaps the first opening pattern and does not overlap the second opening pattern in plan view, and the fourth opening pattern being provided in a position where the fourth opening pattern does not overlap the first opening pattern, the second opening pattern, and the third opening pattern in plan view;
• and
• processing a portion of the substrate where the first opening pattern and the third opening pattern overlap each other in plan view.

A photomask manufacturing method comprising:

• forming a light shield film on a substrate;
• forming a first film on the light shield film;
• forming a first opening pattern and a second opening pattern in the first film, the second opening pattern being provided in a position where the second opening pattern does not overlap the first opening pattern in plan view;
• forming a second film on the substrate on which the first film and the light shield film are formed, after forming the first opening pattern and the second opening pattern;
• forming a third opening pattern and a fourth opening pattern in the second film, the third opening pattern being provided in a position where the third opening pattern partly overlaps the first opening pattern and does not overlap the second opening pattern in plan view, and the fourth opening pattern being provided in a position where the fourth opening pattern does not overlap the first opening pattern, the second opening pattern, and the third opening pattern in plan view;
• and
• processing a portion of the light shield film, the portion corresponding to a position where the first opening pattern and the third opening pattern overlap each other in plan view.