SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

Method of growing at least one SiC single crystal boule (108, 109) in a physical vapor transport growth system, the method comprising the steps of:

• arranging an SiC powder source material (114) in a source material compartment (116),
• arranging at least one SiC seed crystal within a growth compartment (118, 119), wherein said source material compartment (116) is connected to said growth compartment (118, 119) for providing sublimated gaseous components to the growth compartment (118, 119),
• applying an elevated temperature for generating the sublimated gaseous components that generate an SiC growth phase at the SiC seed crystal, so that an SiC volume single crystal boule (108, 109) is formed at the SiC seed crystal,
• wherein the at least one growth compartment (118, 119) comprises a dopant source and/or a dopant sink for controlling a dopant concentration in a radial direction with reference to a longitudinal axis of the single crystal boule (108, 109) during the growth of the single crystal boule.