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US 2022/0090266 A1Published application
Device and method for iii-v light emitting micropixel array device having hydrogen diffusion barrier layer
AssigneeOstendo Technologies, Inc.
InventorsHussein El-Ghoroury, Kameshwar Yadavalli, Andrew Teren, Qian Fan
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Abstract
Solid state light emitting micropixels array structures having hydrogen barrier layers to minimize or eliminate undesirable passivation of doped GaN structures due to hydrogen diffusion.
Claims7
A multi-layer semiconductor light emitting structure comprising:
- a first region having a first composition;
- a second region having a second composition;
- at least one multiple quantum well active region between the first and second regions;
- at least one hydrogen barrier layer on the first region;
- a sidewall pixel contact cap that extends into the first region;
- and;
- a plurality of contact vias that electrically couple the sidewall pixel contact cap to a contact metal rail;
- wherein the first region is completely enveloped or encapsulated by either (i) the at least one hydrogen barrier layer, or (ii) by the sidewall pixel contact cap and the contact vias, thereby preventing or minimizing a hydrogen penetration into the first region of the multi-layer semiconductor light emitting structure.
5 more elements
Dependencies are inferred from the claim text.