US 2022/0089953 A1 · SILICON NITRIDE FILM ETCHING COMPOSITION AND ETCHING METHOD USING THE SAME

Abstract

Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Claims13

Dependent claims

A silicon nitride film etching composition comprising:

a phosphoric acid and a silicon compound including a repeating unit represented by the following Chemical Formula 1, and a residual amount of water:
wherein
R1 to R4 are independently of one another hydrogen, a halogen, cyano, nitro, amino, hydroxy, C1-20 alkoxy, C1-20 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, C3-20 heteroaryl, C6-20 aryl, C1-20 aminoalkyl, or
in which R11 to R14 are independently of one another hydrogen, C1-20 alkyl, or C1-20 hydroxyalkyl, and at least one of two selected from R1 to R4 is C1-20 aminoalkyl and the other one is

1 more element

Dependencies are inferred from the claim text.

Silicon nitride film etching composition and etching method using the same

Life of this patent

Silicon nitride film etching composition and etching method using the same

Life of this patent

Abstract

Claims13