Apparatus and methods for magnetic memory devices with magnetic assist layer

A method comprising:

• applying for a first time interval a first voltage pulse across a first terminal and a second terminal of a spin Hall effect layer that is coupled to a stack comprising a magnetic assist layer, a non-magnetic layer and a magnetic tunnel junction that includes a free layer in a plane, the free layer comprising a switchable magnetization direction perpendicular to the plane, the magnetic assist layer comprising a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane;
• applying for a second time interval a second voltage pulse across the second terminal and a third terminal coupled to the magnetic tunnel junction, the second time interval longer than the first time interval, and the first time interval overlapping a portion of the second time interval;
• and
• switching the magnetization direction of the free layer.

An MRAM non-volatile memory cell comprising:

• a spin Hall effect layer;
• a magnetic tunnel junction that includes a free layer in a plane, the free layer comprising a switchable magnetization direction perpendicular to the plane;
• and
• a magnetic assist layer disposed between the spin Hall effect layer and the magnetic tunnel junction, the magnetic assist layer comprising a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane,
• wherein the spin Hall effect layer is configured to turn ON and turn OFF torque provided by the magnetic assist layer to assist switching the magnetization direction of the free layer.