Method for manufacturing image display device and image display device

An image display device comprising:

• a circuit element;
• a first wiring layer electrically connected to the circuit element;
• a first insulating film covering the circuit element and the first wiring layer;
• a light-emitting element located on the first insulating film;
• a light-shielding layer located in the first insulating film between the circuit element and the light-emitting element;
• a second insulating film covering at least a portion of the light-emitting element, and
• a second wiring layer located on the second insulating film and electrically connected to the light-emitting element,
• the light-emitting element comprising a first semiconductor layer of a first conductivity type, a light-emitting layer located on the first semiconductor layer, and a second semiconductor layer located on the light-emitting layer, the second semiconductor layer being of a second conductivity type that is different from the first conductivity type, wherein:
• in a plan view, the light-shielding layer covers the circuit element.

An image display device comprising:

• a plurality of transistors;
• a first wiring layer electrically connected to the plurality of transistors;
• a first insulating film covering the plurality of transistors and the first wiring layer;
• a first semiconductor layer located on the first insulating film, the first semiconductor layer being of a first conductivity type;
• a light-emitting layer located on the first semiconductor layer;
• a second semiconductor layer located on the light-emitting layer, the second semiconductor layer being of a second conductivity type that is different from the first conductivity type;
• a light-shielding layer located in the first insulating film and located between the first semiconductor layer and the plurality of transistors;
• a second insulating film covering the first insulating film and covering at least a portion of the second semiconductor layer;
• a transparent electrode located on a plurality of exposed surfaces of the second semiconductor layer that are exposed from the second insulating film so as to correspond to respective ones of the plurality of transistors;
• a second wiring layer connected to the transparent electrode;
• and
• a via extending through the first and second insulating films and electrically connecting a wiring portion of the first wiring layer and a wiring portion of the second wiring layer, wherein:
• the light-shielding layer is located between the light-emitting element and the plurality of transistors, and
• in a plan view, the light-shielding layer covers the plurality of transistors.