Nanorod light-emitting device and method of manufacturing the same

A method of manufacturing a nanorod light-emitting device, the method comprising:

• forming a sacrificial layer on a semiconductor substrate;
• forming a first semiconductor layer doped with a first conductivity type on the sacrificial layer;
• forming a light-emitting layer on the first semiconductor layer;
• forming, on the light-emitting layer, a second semiconductor layer doped with a second conductivity type that is electrically opposite to the first conductivity type;
• forming a conductive layer material on the first semiconductor layer between the forming of the first semiconductor layer and the forming of the light-emitting layer, or forming a conductive layer on the light-emitting layer between the forming of the light-emitting layer and the forming of the second semiconductor layer;
• forming a plurality of nanorod light-emitting devices by partially etching the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the conductive layer;
• forming an insulating film by implanting ions into a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the conductive layer;
• and
• forming a current blocking layer that surrounds the side surface of the conductive layer by oxidizing the side surface of the conductive layer through an oxidation process.

A method of manufacturing a nanorod light-emitting device, the method comprising:

• forming a sacrificial layer on a semiconductor substrate;
• forming, on the sacrificial layer, a first semiconductor layer doped with a first conductivity type;
• forming a light-emitting layer on the first semiconductor layer;
• forming, on the light-emitting layer, a second semiconductor layer doped with a second conductivity type that is electrically opposite to the first conductivity type;
• forming a conductive layer material on the first semiconductor layer between the forming of the first semiconductor layer and the forming of the light-emitting layer, or forming a conductive layer on the light-emitting layer between the forming of the light-emitting layer and the forming of the second semiconductor layer;
• forming an insulating film by implanting ions into a region of the second semiconductor layer, a region of the light-emitting layer, and a region of the conductive layer;
• forming a plurality of nanorod light-emitting devices by etching the first semiconductor layer, the light-emitting layer, the second semiconductor layer, the conductive layer, and the insulating film;
• and
• forming a current blocking layer that surrounds a side surface of the conductive layer by oxidizing the side surface of the conductive layer through an oxidation process.