Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same

A display apparatus, comprising:

• a substrate;
• a thin-film transistor disposed on the substrate;
• and
• a first electrode electrically connected to the thin-film transistor,
• wherein the thin-film transistor includes an oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O),
• wherein the content of In is substantially equal to the content of Zn,
• wherein the content of In in the oxide semiconductor layer is greater than the content of Ga, and
• wherein the content of In in the oxide semiconductor layer is greater than the content of Sn.

A display apparatus, comprising:

• a substrate;
• a thin-film transistor disposed on the substrate;
• and
• a first electrode electrically connected to the thin-film transistor,
• wherein the thin-film transistor includes an oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O),
• wherein the oxide semiconductor layer has a packing density of 6.5 g/cm3 or more,
• wherein a content of In in the oxide semiconductor layer is greater than a content of Ga, and
• wherein a content of In in the oxide semiconductor layer is greater than a content of Sn.