Method for fabricating semiconductor device with programmable element
AssigneeNanya Technology Corporation
InventorCHANG-CHIEH LIN
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Abstract
The present application discloses a method for fabricating a semiconductor device The method includes providing a substrate; forming a channel region in the substrate; forming a gate dielectric layer on the channel region; forming a gate bottom conductive layer on the gate dielectric layer; forming first impurity regions on two ends of the channel region; forming first contacts on the first impurity regions; forming programmable insulating layers on the first contacts; forming a gate via on the gate bottom conductive layer; and forming a top conductive layer on the gate via and the programmable insulating layers.
Claims6
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a channel region in the substrate;
- forming a gate dielectric layer on the channel region;
- forming a gate bottom conductive layer on the gate dielectric layer;
- forming first impurity regions on two ends of the channel region;
- forming first contacts on the first impurity regions;
- forming programmable insulating layers on the first contacts;
- forming a gate via on the gate bottom conductive layer;
- and
- forming a top conductive layer on the gate via and the programmable insulating layers.
Dependencies are inferred from the claim text.