Bottom source/drain etch with fin-cut-last-vtfet

A method of forming a semiconductor device, the method comprising:

• forming a set of fins on a substrate, the set of fins and the substrate having a liner, the liner being patterned to expose at least part of the substrate;
• creating an opening underneath the set of fins by etching a portion of the substrate underneath the set of fins;
• and
• forming a source/drain layer in the opening.

A method of forming a semiconductor device, the method comprising:

• forming a set of fins on an insulator material, the insulator material being formed on a substrate, the set of fins and the insulator material having a liner, the liner being patterned to expose at least part of the insulator material;
• creating an opening underneath the set of fins by etching the insulator material underneath the set of fins;
• and
• forming a source/drain layer in the opening to be adjacent to the set of fins.