High-voltage semiconductor device and method of forming the same

Abstract

High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Dependencies are inferred from the claim text.