US 2022/0069069 A1 · THREE-DIMENSIONAL METAL-INSULATOR-METAL (MIM) CAPACITOR

Abstract

A three-dimensional metal-insulator-metal (MIM) capacitor is formed in an integrated circuit structure. The 3D MIM capacitor may include a bottom conductor including a bottom plate portion (e.g., formed in a metal interconnect layer) and vertically-extending sidewall portions extending from the bottom plate portion. An insulator layer is formed on the bottom plate portion and the vertically extending sidewall portions of the bottom conductor. A top conductor is formed over the insulating layer, such that the top conductor is capacitively coupled to both the bottom plate portion and the vertically extending sidewall portions of the bottom conductor, to thereby define an increased area of capacitive coupling between the top and bottom conductors. The vertically extending sidewall portions of the bottom conductor may be formed in a single metal layer or by components of multiple metal layers.

Claims22

Dependent claims

A metal-insulator-metal (MIM) capacitor, comprising:

a bottom conductor including:
a bottom plate portion;
and
at least one vertically extending sidewall portion extending upwardly from the bottom plate portion;
a top conductor;
and
an insulator layer arranged between the top conductor and both the bottom plate portion and the at least one vertically extending sidewall portion of the bottom conductor.

4 more elements

A method of forming a metal-insulator-metal (MIM) capacitor, the method comprising:

forming a bottom plate of a bottom conductor;
forming at least one vertically-extending sidewall portion of the bottom conductor extending upwardly from the bottom plate;
forming an insulator layer having a first insulator portion on the bottom plate and at least one vertically-extending second insulator portion on the at least one vertically extending sidewall portion of the bottom conductor;
and
forming a top conductor on the insulator layer, such that the insulator layer is arranged between the top conductor and both the bottom plate and the at least one vertically-extending sidewall portion of the bottom conductor.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/155,431Filed 22 Jan 2021

Priority

26 Aug 2020

Published

3 Mar 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 1/042
Of capacitors having no potential barriers: using deposition processes to form electrode extensions
H10D 1/696
Electrodes: comprising multiple layers, e.g. comprising a barrier layer and a metal layer
H10D 1/716
Having non-planar surfaces, e.g. formed by texturisation: having vertical extensions
H10W 20/496
Capacitive arrangements or effects of, or between wiring layers: capacitor integral with wiring layers

Three-dimensional metal-insulator-metal (mim) capacitor

Life of this patent

Three-dimensional metal-insulator-metal (mim) capacitor

Life of this patent

Abstract

Claims22