Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsDongho AHN, Segab KWON, Chungman KIM, Kwangmin PARK, Zhe WU, Seunggeun YU, Wonjun LEE, Jabin LEE, Jinwoo LEE
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AssigneeSamsung Electronics Co., Ltd.
InventorsDongho AHN, Segab KWON, Chungman KIM, Kwangmin PARK, Zhe WU, Seunggeun YU, Wonjun LEE, Jabin LEE, Jinwoo LEE
Estimating the term…
A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.