Light-receiving element, solid-state imaging device, and distance measurement device

A solid-state imaging device, comprising:

• a semiconductor substrate;
• and
• lattice-shaped pixel separating parts that divide the semiconductor substrate into a plurality of pixel regions arranged in a matrix form,
• wherein each of the pixel regions includes:
• a first semiconductor region disposed on a first surface side in the semiconductor substrate;
• a second semiconductor region disposed on the first surface side in the semiconductor substrate separately from the first semiconductor region;
• and
• a first blocking region disposed between the first semiconductor region and the second semiconductor region on the first surface side in the semiconductor substrate and having a dielectric constant different from that of the semiconductor substrate, and
• wherein the solid-state imaging device further includes:
• a first read circuit connected to the first semiconductor region;
• and
• a second read circuit connected to the second semiconductor region.

A distance measurement device, comprising:

• a light-emitting unit that projects light with a predetermined wavelength;
• a solid-state imaging device that generates a pixel signal from received light;
• and
• an arithmetic operation unit that calculates a distance to an object on the basis of the pixel signal generated by the solid-state imaging device,
• wherein the solid-state imaging device includes:
• a semiconductor substrate;
• and
• lattice-shaped pixel separating parts that divide the semiconductor substrate into a plurality of pixel regions arranged in a matrix form,
• wherein each of the pixel regions includes:
• a first semiconductor region disposed on a first surface side in the semiconductor substrate;
• a second semiconductor region disposed on the first surface side in the semiconductor substrate separately from the first semiconductor region;
• and
• a first blocking region disposed between the first semiconductor region and the second semiconductor region on the first surface side in the semiconductor substrate and having a dielectric constant different from that of the semiconductor substrate, and
• wherein the solid-state imaging device further comprises:
• a first read circuit connected to the first semiconductor region;
• and
• a second read circuit connected to the second semiconductor region.