Integrated Assemblies, and Methods of Forming Integrated Assemblies

An integrated assembly, comprising:

• a conductive expanse;
• alternating first and second structures over the conductive expanse;
• the first and second structures extending along a first horizontal direction and alternating with one another along a second horizontal direction;
• interfaces between the first and second structures being detectable boundary regions;
• a stack over the alternating structures and comprising conductive first levels alternating with insulative second levels along a vertical direction;
• cell-material-pillars extending through the stack and through the structures to the conductive expanse;
• and
• memory cells along the conductive first levels and comprising regions of the cell-material-pillars.

An integrated assembly, comprising:

• a memory-block-region between a pair of panels, the panels extending along a first horizontal direction;
• a conductive expanse under the panels and directly against lower regions of the panels;
• a laminate over the conductive expanse and between the panels;
• the laminate comprising first structures alternating with second structures along a lateral direction;
• the first and second structures extending along a second horizontal direction which is substantially orthogonal to the first horizontal direction;
• interfaces between the first and second structures being detectable boundary regions;
• a stack over the laminate and comprising conductive first levels alternating with insulative second levels along a vertical direction;
• cell-material-pillars extending through the stack and through the laminate to the conductive expanse;
• and
• memory cells along the conductive first levels and comprising regions of the cell-material-pillars.