Semiconductor storage device

A method of manufacturing a semiconductor storage device, the method comprising:

• forming a substrate having a surface;
• forming a plurality of first conductive layers arranged in a first direction, the first direction intersecting with the surface of the substrate;
• forming a first semiconductor layer extending in the first direction and facing the plurality of first conductive layers, the first semiconductor layer including a first region facing the plurality of first conductive layers and a second region farther from the substrate than the first region;
• forming a first gate insulating film extending in the first direction and covering an outer peripheral surface of the first semiconductor layer;
• forming a first insulating layer extending in the first direction and having an outer peripheral surface covered by the first semiconductor layer;
• and
• forming a second conductive layer arranged farther from the substrate than the plurality of first conductive layers, the second conductive layer being (a) connected to one end of the first semiconductor layer, (b) connected to an inner peripheral surface and an outer peripheral surface of the second region of the first semiconductor layer, and (c) in contact with one end of the first insulating layer.