Semiconductor device
AssigneeKioxia Corporation
InventorsHiroki KAWAI, Junji KATAOKA, Keiji IKEDA
Life of this patent
Estimating the term…
Abstract
A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.
Claims13
A semiconductor device comprising an oxide semiconductor layer,
- the oxide semiconductor layer comprising a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon, and
- the oxide semiconductor layer including a first region in which at least one anion element selected from the group consisting of fluorine or chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.
Dependencies are inferred from the claim text.