Memory structure
AssigneeMacronix International Co., Ltd.
InventorsWei-Chen CHEN, Hang-Ting LUE
Life of this patent
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Abstract
A memory structure is provided. The memory structure includes a first channel body, a first source region, a first drain region, a first gate structure and a second gate structure. The first source region has a first conductivity and connects to a first end of the first channel body. The first drain region has a second conductivity and connects to a second end of the first channel body separated from the first end. The first gate structure is disposed adjacent to the first channel body and between the first end and the second end. The second gate structure disposed adjacent to the first channel body and between the first end and the second end.
Claims20
A memory structure, comprising:
- a first channel body;
- a first source region having a first conductivity and connecting to a first end of the first channel body;
- a first drain region having a second conductivity and connecting to a second end of the first channel body separated from the first end;
- a first gate structure disposed adjacent to the first channel body and between the first end and the second end;
- and
- a second gate structure disposed adjacent to the first channel body and between the first end and the second end.
Dependencies are inferred from the claim text.