US 2022/0068919 A1 · SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Abstract

A semiconductor device structure, along with methods of forming such, are described. The structure includes a first, second, and third gate electrode layers, a first dielectric feature disposed between the first and second gate electrode layers, a second dielectric feature disposed between the second and third gate electrode layers, a first seed layer in contact with the first gate electrode layer, the first dielectric feature, and the second gate electrode layer, a first conductive layer disposed on the first seed layer, a second seed layer in contact with the third gate electrode layer, a second conductive layer disposed on the second seed layer, and a dielectric material disposed on the second dielectric feature, the first conductive layer, and the second conductive layer. The dielectric material is between the first seed layer and the second seed layer and between the first conductive layer and the second conductive layer.

Claims21

Dependent claims

A semiconductor device structure, comprising:

a first gate electrode layer;
a second gate electrode layer adjacent the first gate electrode layer;
a third gate electrode layer adjacent the second gate electrode layer;
a first dielectric feature disposed between the first gate electrode layer and the second gate electrode layer;
a second dielectric feature disposed between the second gate electrode layer and the third gate electrode layer;
a first seed layer in contact with the first gate electrode layer, the first dielectric feature, and the second gate electrode layer;
a first conductive layer disposed on the first seed layer;
a second seed layer in contact with the third gate electrode layer;
a second conductive layer disposed on the second seed layer;
and
a dielectric material disposed on the second dielectric feature, the first conductive layer, and the second conductive layer, wherein the dielectric material is between the first seed layer and the second seed layer and between the first conductive layer and the second conductive layer.

8 more elements

A semiconductor device structure, comprising:

a first gate electrode layer;
a second gate electrode layer adjacent the first gate electrode layer;
a third gate electrode layer adjacent the second gate electrode layer;
a first dielectric feature disposed between the first gate electrode layer and the second gate electrode layer;
a second dielectric feature disposed between the second gate electrode layer and the third gate electrode layer;
a first conductive layer disposed over the first gate electrode layer;
a second conductive layer disposed over the second and third gate electrode layers, wherein the second conductive layer is electrically connected to the second and third gate electrode layers;
a first dielectric material disposed on the first dielectric feature, the first conductive layer, and the second conductive layer, wherein the first dielectric material is between the first conductive layer and the second conductive layer;
and
a conductive feature disposed in the first dielectric material and in contact with the second conductive layer.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device structure and methods of forming the same

Life of this patent

Semiconductor device structure and methods of forming the same

Life of this patent

Abstract

Claims21