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US 2022/0068860 A1Published application
Bonding structure and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Jie Chen, Ming-Fa Chen
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Abstract
A device includes an interconnect structure over a substrate, multiple first conductive pads over and connected to the interconnect structure, a planarization stop layer extending over the sidewalls and top surfaces of the first conductive pads of the multiple first conductive pads, a surface dielectric layer extending over the planarization stop layer, and multiple first bonding pads within the surface dielectric layer and connected to the multiple first conductive pads
Claims20
A method comprising:
- forming an insulating layer over an interconnect structure;
- forming a conductive element over the insulating layer, the conductive element extending through the insulating layer to electrically connect to the interconnect structure;
- forming a first stop layer extending over the insulating layer and extending over sidewalls and a top surface of the conductive element;
- forming a second insulating layer over the first stop layer;
- forming a second stop layer over the first stop layer, wherein the second stop layer physically contacts a top surface of the second insulating layer and physically contacts a top surface of the first stop layer;
- forming a bonding layer over the second stop layer;
- and
- forming a first bonding pad in the bonding layer.
5 more elements
A method comprising:
- forming a first package, comprising:
- forming an interconnect structure over a first substrate;
- forming first conductive pads over and electrically connected to the interconnect structure;
- depositing a planarization stop layer over the first conductive pads, wherein the planarization stop layer covers sidewalls and top surfaces of the first conductive pads;
- depositing a first bonding layer over the planarization stop layer;
- and
- forming first bonding pads within the first bonding layer, wherein at least one first bonding pad is physically and electrically connected to a respective first conductive pad.
4 more elements
A method comprising:
- forming a conductive pad on an insulating layer;
- conformally depositing a first stop layer on surfaces of the conductive pad;
- depositing a first dielectric layer on the first stop layer;
- performing a planarization process on the first dielectric layer and the first stop layer, wherein a portion of the first stop layer remains on a top surface of the conductive pad after performing the planarization process;
- depositing a second stop layer on the first stop layer and the first dielectric layer;
- depositing a second dielectric layer on the second stop layer;
- etching a first opening extending through the second dielectric layer and the second stop layer to expose the conductive pad, wherein the second stop layer is used as an etch stop layer during the etching;
- and
- depositing a conductive material in the first opening to form a first conductive feature physically and electrically contacting the conductive pad.
6 more elements
Dependencies are inferred from the claim text.