Three-dimensional nand memory device and method of forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHe CHEN, Liang XIAO
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHe CHEN, Liang XIAO
Estimating the term…
A semiconductor device is provided. The semiconductor device includes a base layer having a first side for forming memory cells and a second side that is opposite to the first side. The semiconductor device includes a stack of alternating word line layers and insulating layers that is positioned over the first side of the base layer, where the stack includes a first region and a second region. A channel structure extends through the first region of the stack in a vertical direction and further extends into the base layer from the first side. A plurality of connection structures are formed over the second side of the base layer and include a first connection structure that is coupled to the channel structure.
A semiconductor device, comprising:
A method for manufacturing a semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.