Measuring device, measuring method, and semiconductor storage device

A measuring method comprising:

• irradiating a subject with X-rays;
• detecting scattered X-rays emitted from the subject based on the irradiation;
• and
• analyzing a diffraction image obtained by photo-electrically converting the scattered X-rays and estimating a front surface contour shape of a measurement area irradiated with the X-rays,
• wherein a first film and a second film, the second film formed of a material different from the first film, are stacked in order in the measurement area of the subject, and a hole or groove portion penetrating the second film is formed in a part of the measurement area, and
• wherein the front surface contour shape is estimated based on (i) a plurality of the diffraction images obtained by changing an irradiation angle of the X-rays to the subject and (ii) measurement data obtained by measuring the subject using at least one measuring method of a multi-wavelength light measurement or a laser ultrasonic wave measurement.

A measuring device comprising:

• a stage arranged to support a subject;
• an X-ray irradiator configured to irradiate the stage with X-rays;
• an X-ray detector configured to detect scattered X-rays emitted from the subject based on the irradiation;
• and
• a processor configured to analyze a diffraction image obtained by photo-electrically converting the scattered X-rays,
• the processor configured to:
• estimate a front surface contour shape of a measurement area irradiated with the X-rays,
• estimate an interface between a first film and a second film;
• and
• a multi-wavelength light measurement device or a laser ultrasonic wave measurement device configured to perform a measurement on the subject.