Etching method and etching apparatus

An etching method for etching an oxygen-containing silicon film by supplying an etching gas to a substrate, the etching method comprising:

• adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate;
• desorbing an excess of the organic amine compound gas from the substrate by supplying an inert gas to the substrate;
• and
• etching the oxygen-containing silicon film by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.

An etching apparatus for etching an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening widths, by supplying an etching gas to the substrate, the etching apparatus comprising:

• a processing container;
• a stage provided in the processing container to place the substrate thereon;
• an organic amine compound gas supplier configured to supply an organic amine compound gas into the processing container to be adsorbed on the oxygen-containing silicon film;
• a desorption mechanism configured to desorb an excess of the organic amine compound gas from the substrate;
• and
• an etching gas supplier configured to supply the etching gas containing a halogen into the processing container to selectively etch the oxygen-containing silicon film on which the organic amine compound has been adsorbed with respect to each recess.