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US 2022/0068647 A1Published application
Method and system for forming patterned features on a surface of a substrate
AssigneeASM IP Holding B.V.
InventorsSeungHyun Lee, YeaHyun Gu, Hyunchul Kim, Naoki Inoue
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Abstract
Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include using a plasma-enhanced cyclical deposition process to form a transformable layer including a first material and exposing the transformable layer to energy to form a second material. The first or second material can be selectively etched relative to the other of the first and second material.
Claims20
A method of forming patterned features on a surface of a substrate, the method comprising the steps of:
- using a plasma-enhanced cyclical deposition process, forming a transformable layer comprising a first material on the surface of the substrate, the first material comprising one or more of silicon, titanium, tin, hafnium, zirconium, indium, antimony, tellurium, iodine, and cesium;
- and
- exposing the transformable layer to energy to form a second material in a first region of the transformable layer exposed to the energy and a second region of the transformable layer not exposed to the energy comprising the first material;
- wherein an etch rate of the first material is different than an etch rate of the second material.
1 more element
A system comprising:
- one or more reaction chambers;
- a precursor source comprising one or more of a silicon precursor, a titanium precursor, a tin precursor, a hafnium precursor, a zirconium precursor, an indium precursor, an antimony precursor, a tellurium precursor, an iodine precursor, and a cesium precursor;
- a reactant source;
- a plasma power source;
- an exhaust source;
- and
- a controller,
- wherein the controller is configured to control gas flow of a precursor and a reactant into at least one of the one or more reaction chambers to form a transformable layer on a surface of a substrate, and
- wherein the gas flow of the precursor and the gas flow of the reactant overlap within the at least one of the one or more reaction chambers.
6 more elements
Dependencies are inferred from the claim text.