Substrate processing method and substrate processing device

A substrate processing device used for a substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the device comprising:

• a holding unit that holds a substrate;
• a supply unit that supplies, to the substrate, a solution containing metal;
• and
• a controller that controls operation of the holding unit and operation of the supply unit, wherein
• the controller is configured to execute:
• a holding process including:
• holding, before executing the thermal treatment, the substrate on which the silicon film is formed;
• and
• an adhesion process including:
• supplying, to the substrate that is held in the holding process, the solution containing the metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].