Memory device with word line pulse recovery

A memory device, comprising:

• a memory array including a plurality of memory cells;
• a word line (WL), connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse;
• a first tracking WL, formed adjacent to the memory array, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope;
• and
• a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.

A method of operating a memory device, comprising:

• transitioning, from a first logic state to a second logic state, a word line (WL) coupled to a memory cell;
• transitioning, from the first logic state to the second logic state, a tracking WL that emulate the WL with a decreased slope by at least one of:
• (i) coupling the tracking WL directly to a bit line (BL) coupled to the memory cell or (ii) coupling the tracking WL to a first tracking BL that emulates the BL;
• and
• extending a timing to transition, from the second logic state to the first logic state, the WL by discharging, in accordance with the decreased slope, a second tracking BL that emulates the BL.