Positive resist material and patterning process

Abstract

The present invention is a positive resist material containing: an acid generator, being a sulfonium salt having at least one fluorine atom in both an anion moiety of a sulfonate ion bonded to a polymer main chain and a cation moiety of a sulfonium ion; and a quencher, being a sulfonium salt containing an anion moiety of a carboxylate ion, a sulfonamide ion, an alkoxide ion, or a sulfonate ion having no fluorine atom at a position and a cation moiety of a sulfonium ion, the quencher having a total of two or more fluorine atoms in the anion moiety and the cation moiety. An object of the present invention is to provide: a positive resist material having sensitivity higher than that of conventional positive resist materials, and having little dimensional variation (CDU) in an exposure pattern; and a patterning process using the positive resist material.

Dependencies are inferred from the claim text.