Grain-oriented electrical steel sheet and method for producing same
AssigneePosco
InventorsDae-Hyun SONG, June Soo PARK
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Abstract
A grain-oriented electrical steel sheet according to an embodiment of the present invention includes: an electrical steel sheet substrate including, by wt %, 2.0 to 6.0% of Si, equal to or less than 0.005% of C (excluding 0%), 0.01 to 0.05% of Sb, 0.03 to 0.08% of Sn, 0.01 to 0.2% of Cr, and 0.0003 to 0.097% of Co, and including a remainder of Fe and inevitable impurities; and a metal oxide layer disposed on a surface of the electrical steel sheet substrate, wherein the metal oxide layer includes 0.0005 to 0.25 wt % of Co.
Claims11
A grain-oriented electrical steel sheet comprising:
- an electrical steel sheet substrate including, by wt %, 2.0 to 6.0% of Si, equal to or less than 0.005% of C (excluding 0%), 0.01 to 0.05% of Sb, 0.03 to 0.08% of Sn, 0.01 to 0.2% of Cr, and 0.0003 to 0.097% of Co, and including a remainder of Fe and inevitable impurities;
- and
- a metal oxide layer disposed on a surface of the electrical steel sheet substrate,
- wherein the metal oxide layer includes 0.0005 to 0.25 wt % of Co.
A method for manufacturing a grain-oriented electrical steel sheet comprising:
- heating a slab including, by wt %, 2.0 to 6.0% of Si, 0.02 to 0.08% of C, 0.01 to 0.05% of Sb, 0.03 to 0.08% of Sn, 0.01 to 0.2% of Cr, and 0.0005 to 0.1% of Co, and including a remainder of Fe, and inevitable impurities;
- manufacturing a hot rolled sheet by hot rolling the slab;
- manufacturing a cold-rolled sheet by cold rolling the hot rolled sheet;
- performing a primary recrystallization annealing on the cold-rolled sheet;
- and
- performing a secondary recrystallization annealing on the cold-rolled sheet having undergone a primary recrystallization annealing,
- wherein the primary recrystallization annealing includes a first temperature rising stage, a second temperature rising stage, and a soaking stage,
- an oxidization ability of the first temperature rising stage is 0.7 to 2.0, an oxidization ability of the second temperature rising stage is 0.05 to 0.6, and an oxidization ability of the soaking stage 0.3 to 0.6.
Dependencies are inferred from the claim text.