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US 2022/0064485 A1Published application
Chemical mechanical polishing of substrates containing copper and ruthenium
AssigneeBASF SE
InventorsHaci Osman GUEVENC, Michael LEUTER, WEI Taoyuan, Wei Lan CHIU, Reza M. GOLZARIAN, Julian PROELSS, Leonardus LEUNISSEN
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Abstract
The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.
Claims16
-15. (canceled)
A chemical-mechanical polishing (CMP) composition comprising
- (A) at least one inorganic abrasive particle;
- (B) at least one chelating agent selected from carboxylic acids;
- (C) at least one corrosion inhibitor selected from unsubstituted or substituted triazoles;
- (D) at least one non-ionic surfactant comprising at least one polyoxyalkylene group;
- (E) at least one pad-cleaning agent selected from compounds having at least one amino group and at least one acidic group selected from the group consisting of carboxylic, phosphonic and sulfonic acids;
- (F) at least one carbonate or hydrogen carbonate;
- (G) at least one oxidizing agent selected from the group consisting of organic peroxides, inorganic peroxides, persulfates, iodates, periodic acids, periodates, permanganates, perchloric acids, perchlorates, bromic acids and bromates;
- and
- (H) an aqueous medium.
6 more elements
Dependencies are inferred from the claim text.